sot23 n-channel enhancement mode vertical dmos fet issue 2 C january 1996 features * 60 volt v ds *r ds(on) =5 w partmarking detail C my absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb = 25c i d 150 ma pulsed drain current i dm 3a gate source voltage v gs 20 v power dissipation at t amb = 25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =100 m a, v gs =0v gate-source breakdown voltage v gs(th) 0.8 2.5 v i d =1ma, v ds = v gs gate body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current (1) i dss 10 m a v ds =60 v, v gs =0v on state drain current(1) i d(on) 750 ma v ds =15 v, v gs =10v static drain source on state resistance (1) r ds(on) 5.0 7.5 w w v gs =10v, i d =500ma v gs =5v, i d =200ma forward transconductance (1)(2) g fs 100 ms v ds =15v, i d =500ma input capacitance (2) c iss 60 pf common source output capacitance (2) c oss 25 pf v ds =25 v, v gs =0v f=1mhz reverse transfer capacitance (2) c rss 5pf turn-on time (2)(3) t (on) 310ns v dd ? 15v, i d =600ma turn-off time (2)(3) t (off) 410ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device for typical characteristics graphs see zvn3306f datasheet. VN10LF d g s 3 - 308
|
